Parametric results for: NT4GC64B8HB0NS under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

DUAL BANK PAGE BURST 3

3 hits Apply

Access Time-Max (2)

255 ps 1 300 ps 1

Min (ns) - Max (ns)

3 hits Apply

AUTO/SELF REFRESH 3

3 hits Apply

Clock Frequency-Max (fCLK) (2)

533 MHz 1 667 MHz 1

Min (MHz) - Max (MHz)

3 hits Apply

COMMON 2

3 hits Apply

R-XDMA-N204 3

3 hits Apply

e4 3

3 hits Apply

67.6 mm 3

3 hits Apply

Manufacturer (1)

Nanya Technology Corporation 3

3 hits Apply

Memory Density (1)

34.3597 Gbit 3

3 hits Apply

DDR DRAM MODULE 3

3 hits Apply

Memory Width (1)

64 3

3 hits Apply

1.0 3

3 hits Apply

1 3

3 hits Apply

204 3

3 hits Apply

536.8709 M 3

3 hits Apply

5.12E8 3

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

85.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (1)

512MX64 3

3 hits Apply

3-STATE 2

3 hits Apply

UNSPECIFIED 3

3 hits Apply

DIMM 3

3 hits Apply

DIMM204,24 2

3 hits Apply

RECTANGULAR 3

3 hits Apply

MICROELECTRONIC ASSEMBLY 3

3 hits Apply

Refresh Cycles (1)

8192 2

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.5 V 3

3 hits Apply