Parametric results for: NSBC114YPDXV6T1 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT IN BIAS RESISTOR RATIO IS 4.7 3

3 hits Apply

Collector Current-Max (IC) (1)

100 mA 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 3

3 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

80.0 3

3 hits Apply

R-PDSO-F6 3

3 hits Apply

e3 3

3 hits Apply

Manufacturer (2)

onsemi 2 Rochester Electronics LLC 1

3 hits Apply

1 2 NOT SPECIFIED 1

3 hits Apply

Number of Elements (1)

2 3

3 hits Apply

Number of Terminals (1)

6 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

Yes 2

3 hits Apply

260 3

3 hits Apply

Polarity/Channel Type (1)

NPN AND PNP 3

3 hits Apply

500 mW 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply