Parametric results for: NP36P06SLG under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

54.8 mJ 3

13 hits Apply

DRAIN 6

13 hits Apply

Configuration (2)

SINGLE 7 SINGLE WITH BUILT-IN DIODE 6

13 hits Apply

DS Breakdown Voltage-Min (1)

60 V 6

13 hits Apply

Drain Current-Max (ID) (1)

36 A 13

13 hits Apply

Drain-source On Resistance-Max (1)

40 mΩ 6

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

TO-252AA 6

13 hits Apply

R-PSSO-G2 6

13 hits Apply

e0 3 e3 3

13 hits Apply

Manufacturer (3)

NEC Electronics America Inc 2 NEC Electronics Group 2 Renesas Electronics Corporation 9

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

2 6

13 hits Apply

ENHANCEMENT MODE 11

13 hits Apply

175.0 °C 9

13 hits Apply

PLASTIC/EPOXY 6

13 hits Apply

RECTANGULAR 6

13 hits Apply

SMALL OUTLINE 6

13 hits Apply

Active 6 End Of Life 1 Obsolete 2 Transferred 4

13 hits Apply

No 1 Yes 3

13 hits Apply

260 1 NOT SPECIFIED 2

13 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 13

13 hits Apply

56 W 9

13 hits Apply

Surface Mount (1)

YES 13

13 hits Apply