Parametric results for: NM93C86AMM8 under EEPROMs

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; DATA RETENTION = 40 YEARS 2

2 hits Apply

8 1 16 1

Min - Max

2 hits Apply

Clock Frequency-Max (fCLK) (1)

500 kHz 2

2 hits Apply

40 2

2 hits Apply

1000000.0 Write/Erase Cycles 2

2 hits Apply

R-PDSO-G8 2

2 hits Apply

e0 2

2 hits Apply

4.9 mm 2

2 hits Apply

Manufacturer (2)

National Semiconductor Corporation 1 Texas Instruments 1

2 hits Apply

Memory Density (1)

16.384 kbit 2

2 hits Apply

EEPROM 2

2 hits Apply

Memory Width (2)

8 1 16 1

Min - Max

2 hits Apply

1.0 2

2 hits Apply

8 2

2 hits Apply

1.024 k 1 2.048 k 1

Min (words) - Max (words)

2 hits Apply

1000.0 1 2000.0 1

Min - Max

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

125.0 °C 2

2 hits Apply

-55.0 °C 2

2 hits Apply

Organization (2)

1KX16 1 2KX8 1

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SOP 2

2 hits Apply

SOP8,.25 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply