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NM93C66LZTEM8
Texas Instruments
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Check for Price | No | No | Obsolete | 4.096 kbit | 16 | 256X16 | 5 V | EEPROM | MICROWIRE BUS INTERFACE; AUTOMATIC WRITE... more | 40 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 1 µA | 1 µA | 6 V | 2 V | CMOS | INDUSTRIAL | SOFTWARE | R-PDSO-G8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | NATIONAL SEMICONDUCTOR CORP | SOIC | SOP, SOP8,.25 | 8 | unknown | EAR99 | 8542.32.00.51 | ||||
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NM93C66LN
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | 4.096 kbit | 16 | 256X16 | 3.3 V | 250 kHz | EEPROM | 40 YEAR DATA RETENTION | 40 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | MICROWIRE | 10 µA | 1 µA | 5.5 V | 2.7 V | CMOS | COMMERCIAL | 15 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 9.817 mm | 7.62 mm | FAIRCHILD SEMICONDUCTOR CORP | DIP | PLASTIC, DIP-8 | 8 | unknown | EAR99 | 8542.32.00.51 | |||||
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NM93C66LZEN
Texas Instruments
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Check for Price | No | Transferred | 4.096 kbit | 16 | 256X16 | 5 V | 250 kHz | EEPROM | MICROWIRE BUS INTERFACE; AUTOMATIC WRITE... more | 40 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 1 µA | 1 µA | 5.5 V | 2.7 V | CMOS | INDUSTRIAL | 15 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e0 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 9.817 mm | 7.62 mm | NATIONAL SEMICONDUCTOR CORP | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | |||
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NM93C66LMT8
Texas Instruments
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Check for Price | No | Transferred | 4.096 kbit | 16 | 256X16 | 5 V | 250 kHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 10 µA | 1 µA | 5.5 V | 2.7 V | CMOS | COMMERCIAL | 15 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Tin/Lead (Sn/Pb) | GULL WING | 650 µm | DUAL | 1.1 mm | 4.4 mm | 3 mm | NATIONAL SEMICONDUCTOR CORP | SOIC | TSSOP, TSSOP8,.25 | 8 | unknown | EAR99 | 8542.32.00.51 | |||||
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NM93C66LZMT8X
National Semiconductor Corporation
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Check for Price | Transferred | 4.096 kbit | 16 | 256X16 | 5 V | 250 kHz | EEPROM | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 5.5 V | 2.7 V | CMOS | COMMERCIAL | 15 ms | R-PDSO-G8 | Not Qualified | 70 °C | 8 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 650 µm | DUAL | 1.1 mm | 4.4 mm | 3 mm | NATIONAL SEMICONDUCTOR CORP | TSSOP, | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||
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NM93C66LMT8X
Texas Instruments
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Check for Price | Transferred | 4.096 kbit | 16 | 256X16 | 5 V | 250 kHz | EEPROM | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 5.5 V | 2.7 V | CMOS | COMMERCIAL | 15 ms | R-PDSO-G8 | Not Qualified | 70 °C | 8 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 650 µm | DUAL | 1.1 mm | 4.4 mm | 3 mm | NATIONAL SEMICONDUCTOR CORP | SOIC | TSSOP, | 8 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||
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NM93C66LVMT8
National Semiconductor Corporation
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Check for Price | No | Obsolete | 4.096 kbit | 16 | 256X16 | 5 V | 250 kHz | EEPROM | 40 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 10 µA | 1 µA | 5.5 V | 2.7 V | CMOS | AUTOMOTIVE | 15 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e0 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | TIN LEAD | GULL WING | 650 µm | DUAL | 1.1 mm | 4.4 mm | 3 mm | NATIONAL SEMICONDUCTOR CORP | TSSOP, TSSOP8,.25 | unknown | EAR99 | 8542.32.00.51 | ||||||
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NM93C66LVM8X
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | 4.096 kbit | 16 | 256X16 | 3.3 V | 250 kHz | EEPROM | 40 YEAR DATA RETENTION | 40 | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | MICROWIRE | 5.5 V | 2.7 V | CMOS | AUTOMOTIVE | 15 ms | R-PDSO-G8 | Not Qualified | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | FAIRCHILD SEMICONDUCTOR CORP | SOIC | SOP, | 8 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||
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NM93C66LZN
Texas Instruments
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Check for Price | No | Transferred | 4.096 kbit | 16 | 256X16 | 5 V | 250 kHz | EEPROM | MICROWIRE BUS INTERFACE; AUTOMATIC WRITE... more | 40 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | 3-STATE | SERIAL | MICROWIRE | 1 µA | 1 µA | 5.5 V | 2.7 V | CMOS | COMMERCIAL | 15 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e0 | 70 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 9.817 mm | 7.62 mm | NATIONAL SEMICONDUCTOR CORP | DIP | DIP, DIP8,.3 | 8 | unknown | EAR99 | 8542.32.00.51 | ||||
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NM93C66LVN
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | 4.096 kbit | 16 | 256X16 | 3.3 V | 250 kHz | EEPROM | 40 YEAR DATA RETENTION | 40 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | MICROWIRE | 10 µA | 1 µA | 5.5 V | 2.7 V | CMOS | AUTOMOTIVE | 15 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e0 | 125 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 9.817 mm | 7.62 mm | FAIRCHILD SEMICONDUCTOR CORP | DIP | PLASTIC, DIP-8 | 8 | compliant | EAR99 | 8542.32.00.51 |