Parametric results for: NM24C03LEN under EEPROMs

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Manufacturer Part Number: nm24c03len
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NM24C03LEN
National Semiconductor Corporation
Check for Price No Obsolete 2.048 kbit 8 256X8 5 V 400 kHz EEPROM 16 BYTE PAGE WRITE; WRITE PROTECT; DATA RETENTION>40 YEARS 40 1000000 Write/Erase Cycles 1010DDDR 1 256 256 words SYNCHRONOUS OPEN-DRAIN SERIAL I2C 10 µA 1 µA 5.5 V 2.7 V CMOS INDUSTRIAL 15 ms HARDWARE R-PDIP-T8 Not Qualified e0 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 9.817 mm 7.62 mm NATIONAL SEMICONDUCTOR CORP DIP, DIP8,.3 unknown EAR99 8542.32.00.51
NM24C03LEN
Fairchild Semiconductor Corporation
Check for Price No Obsolete 2.048 kbit 1 2KX1 3.3 V 100 kHz EEPROM 16 BYTE PAGE WRITE; DATA RETENTION > 40 YEARS 40 1000000 Write/Erase Cycles 1010DDDR 1 2000 2.048 k SYNCHRONOUS SERIAL I2C 10 µA 1 µA 5.5 V 2.7 V CMOS INDUSTRIAL 15 ms HARDWARE R-PDIP-T8 Not Qualified e0 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 9.817 mm 7.62 mm FAIRCHILD SEMICONDUCTOR CORP DIP, DIP8,.3 unknown EAR99 8542.32.00.51 DIP 8
NM24C03LEN
Texas Instruments
Check for Price No Obsolete 2.048 kbit 8 256X8 5 V 400 kHz EEPROM 16 BYTE PAGE WRITE; WRITE PROTECT; DATA RETENTION>40 YEARS 40 1000000 Write/Erase Cycles 1010DDDR 1 256 256 words SYNCHRONOUS OPEN-DRAIN SERIAL I2C 10 µA 1 µA 5.5 V 2.7 V CMOS INDUSTRIAL 15 ms HARDWARE R-PDIP-T8 Not Qualified e0 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 9.817 mm 7.62 mm NATIONAL SEMICONDUCTOR CORP DIP, DIP8,.3 unknown EAR99 8542.32.00.51