Parametric results for: NES1823P-70 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 3

4 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 3

4 hits Apply

DS Breakdown Voltage-Min (1)

12 V 3

4 hits Apply

Drain Current-Max (ID) (2)

11 A 1 38 A 3

Min (A) - Max (A)

4 hits Apply

METAL SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

S BAND 3

4 hits Apply

R-CDFM-F4 3

4 hits Apply

Manufacturer (4)

NEC Compound Semiconductor Devices Ltd 1 NEC Electronics America Inc 1 NEC Electronics Group 1 Renesas Electronics Corporation 1

4 hits Apply

Number of Elements (1)

2 3

4 hits Apply

Number of Terminals (1)

4 3

4 hits Apply

DEPLETION MODE 3

4 hits Apply

175.0 °C 1

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

175 W 1

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply