Parametric results for: NE76084 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 8 LOW NOISE, HIGH RELIABILITY 2

13 hits Apply

Configuration (1)

SINGLE 13

13 hits Apply

DS Breakdown Voltage-Min (1)

5 V 12

13 hits Apply

Drain Current-Max (ID) (1)

50 mA 5

13 hits Apply

METAL SEMICONDUCTOR 12

13 hits Apply

Highest Frequency Band (1)

KU BAND 13

13 hits Apply

O-CRDB-F4 11 O-XRDB-F4 2

13 hits Apply

Manufacturer (4)

California Eastern Laboratories (CEL) 3 NEC Electronics America Inc 2 NEC Electronics Group 6 Renesas Electronics Corporation 2

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

4 13

13 hits Apply

DEPLETION MODE 12

13 hits Apply

175.0 °C 5

13 hits Apply

CERAMIC, METAL-SEALED COFIRED 11 UNSPECIFIED 2

13 hits Apply

ROUND 13

13 hits Apply

DISK BUTTON 13

13 hits Apply

Obsolete 13

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

13 hits Apply

240 mW 2

13 hits Apply

Power Gain-Min (Gp) (2)

8.0 dB 12 9.0 dB 1

Min (dB) - Max (dB)

13 hits Apply

Surface Mount (1)

YES 13

13 hits Apply