Parametric results for: NE71000 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

LOW NOISE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

5 V 4

4 hits Apply

Drain Current-Max (ID) (1)

120 mA 4

4 hits Apply

METAL SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

K BAND 4

4 hits Apply

R-XUUC-N5 4

4 hits Apply

Manufacturer (1)

California Eastern Laboratories (CEL) 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

5 4

4 hits Apply

DEPLETION MODE 4

4 hits Apply

175.0 °C 4

4 hits Apply

UNSPECIFIED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

UNCASED CHIP 4

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Power Gain-Min (Gp) (1)

8.0 dB 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply