Parametric results for: NE6510379A-AZ under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

SOURCE 8

8 hits Apply

Configuration (1)

SINGLE 8

8 hits Apply

DS Breakdown Voltage-Min (2)

4.2 V 2 6 V 6

Min (V) - Max (V)

8 hits Apply

Drain Current-Max (ID) (1)

4.2 A 8

8 hits Apply

HETERO-JUNCTION 8

8 hits Apply

Highest Frequency Band (1)

L BAND 8

8 hits Apply

R-CQMW-F4 6 R-XQMW-F4 2

8 hits Apply

e0 4 e6 2

8 hits Apply

Manufacturer (2)

NEC Compound Semiconductor Devices Ltd 4 NEC Electronics Group 4

8 hits Apply

1 2

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

4 8

8 hits Apply

DEPLETION MODE 8

8 hits Apply

CERAMIC, METAL-SEALED COFIRED 6 UNSPECIFIED 2

8 hits Apply

RECTANGULAR 8

8 hits Apply

MICROWAVE 8

8 hits Apply

Obsolete 1 Transferred 7

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

Surface Mount (1)

YES 8

8 hits Apply