Parametric results for: NE64700 under RF Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 2

2 hits Apply

Collector Current-Max (IC) (1)

20 mA 2

2 hits Apply

Collector-Emitter Voltage-Max (2)

7 V 1 9 V 1

Min (V) - Max (V)

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DC Current Gain-Min (hFE) (2)

40.0 1 50.0 1

Min - Max

2 hits Apply

Highest Frequency Band (2)

K BAND 1 ULTRA HIGH FREQUENCY BAND 1

2 hits Apply

S-XUUC-N 1 S-XUUC-N2 1

2 hits Apply

Manufacturer (2)

Advanced Semiconductor Inc 1 California Eastern Laboratories (CEL) 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

200.0 °C 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

SQUARE 2

2 hits Apply

UNCASED CHIP 2

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

180 mW 1

2 hits Apply

Power Gain-Min (Gp) (1)

20.0 dB 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply

Transition Frequency-Nom (fT) (2)

11 GHz 1 12 GHz 1

Min (MHz) - Max (MHz)

2 hits Apply