Parametric results for: NE552R479A-T1A under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

SOURCE 5

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

6 V 5

5 hits Apply

Drain Current-Max (ID) (1)

500 mA 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

Highest Frequency Band (1)

S BAND 5

5 hits Apply

R-CQMW-F4 1 R-XQMW-F4 4

5 hits Apply

e0 3 e6 1

5 hits Apply

Manufacturer (3)

NEC Compound Semiconductor Devices Ltd 2 NEC Electronics America Inc 1 NEC Electronics Group 2

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 1 UNSPECIFIED 4

5 hits Apply

RECTANGULAR 5

5 hits Apply

MICROWAVE 5

5 hits Apply

Transferred 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply