Parametric results for: NE5520379A-A under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

3.8 V 3

3 hits Apply

Drain Current-Max (ID) (1)

1.5 A 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

Highest Frequency Band (1)

L BAND 3

3 hits Apply

R-XQMW-F4 3

3 hits Apply

e6 2

3 hits Apply

Manufacturer (3)

NEC Compound Semiconductor Devices Ltd 1 NEC Electronics Group 1 Renesas Electronics Corporation 1

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

UNSPECIFIED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

MICROWAVE 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Yes 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

10 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply