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NE5517ANSIIA
Philips Semiconductors
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Check for Price | No | Obsolete | 5 mV | 4 mA | 2 | OPERATIONAL AMPLIFIER | 15 V | -15 V | BIPOLAR | TRANSCONDUCTANCE | 5 µA | YES | NO | 22 V | COMMERCIAL | R-PDIP-T16 | Not Qualified | e0 | 70 °C | 16 | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | PHILIPS SEMICONDUCTORS | DIP, DIP16,.3 | unknown | EAR99 | 8542.33.00.01 | ||||||||||||||||||||||||||||||||
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NE5517AN
Philips Semiconductors
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Check for Price | No | Transferred | 5 mV | 4 mA | 2 | OPERATIONAL AMPLIFIER | 15 V | -15 V | BIPOLAR | TRANSCONDUCTANCE | 5 µA | YES | NO | 22 V | COMMERCIAL | R-PDIP-T16 | Not Qualified | e0 | 70 °C | 16 | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | TUBE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | PHILIPS SEMICONDUCTORS | DIP, DIP16,.3 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||||||||||||
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NE5517ANSIIB
Philips Semiconductors
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Check for Price | No | Obsolete | 5 mV | 4 mA | 2 | OPERATIONAL AMPLIFIER | 15 V | -15 V | BIPOLAR | TRANSCONDUCTANCE | 5 µA | YES | NO | 22 V | COMMERCIAL | R-PDIP-T16 | e0 | 70 °C | 16 | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | PHILIPS SEMICONDUCTORS | DIP, DIP16,.3 | unknown | EAR99 | 8542.33.00.01 | |||||||||||||||||||||||||||||||||
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NE5517AN
onsemi
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Check for Price | No | Obsolete | 5 mV | 50 V/us | 7 µA | 4 mA | 2 | OPERATIONAL AMPLIFIER | 15 V | -15 V | BIPOLAR | TRANSCONDUCTANCE | 5 µA | YES | NO | -22 V | 22 V | COMMERCIAL | 2000 | R-PDIP-T16 | Not Qualified | e0 | 110 dB | 70 °C | 235 | 16 | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | RAIL | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 4.4 mm | 7.62 mm | 19.175 mm | ON SEMICONDUCTOR | DIP, DIP16,.3 | not_compliant | EAR99 | 8542.33.00.01 | PDIP-16 | 16 | 648-08 | onsemi | ||||||||||||||||||
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NE5517AN
NXP Semiconductors
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Check for Price | No | Obsolete | 5 mV | 50 V/us | 7 µA | 4 mA | 2 | OPERATIONAL AMPLIFIER | 15 V | -15 V | BIPOLAR | TRANSCONDUCTANCE | 5 µA | YES | NO | -22 V | 22 V | COMMERCIAL | 2000 | R-PDIP-T16 | Not Qualified | 110 dB | 1 | 70 °C | 16 | PLASTIC/EPOXY | DIP | DIP16,.3 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 4.2 mm | 7.62 mm | 19.025 mm | NXP SEMICONDUCTORS | DIP, DIP16,.3 | unknown | EAR99 | 8542.33.00.01 | DIP | 16 | |||||||||||||||||||||||
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NE5517A-250
LSI Corporation
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Check for Price | No | Obsolete | 5 V | MOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | QUAD | SEEQ TECHNOLOGY INC | QCCJ, LDCC32,.5X.6 | unknown | EAR99 | 8542.32.00.51 | 250 ns | NO | YES | 1000000 Write/Erase Cycles | 16.384 kbit | EEPROM | 8 | 2.048 k | 2000 | 2KX8 | PARALLEL | NO | 10 ms | ||||||||||||||||||||||||||||
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NE5517A-300
LSI Corporation
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Check for Price | No | Obsolete | 5 V | MOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | QUAD | SEEQ TECHNOLOGY INC | QCCJ, LDCC32,.5X.6 | unknown | EAR99 | 8542.32.00.51 | 300 ns | NO | YES | 1000000 Write/Erase Cycles | 16.384 kbit | EEPROM | 8 | 2.048 k | 2000 | 2KX8 | PARALLEL | NO | 10 ms | ||||||||||||||||||||||||||||
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NE5517AD
Philips Semiconductors
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Check for Price | No | Obsolete | 5 mV | 4 mA | 2 | OPERATIONAL AMPLIFIER | 15 V | -15 V | BIPOLAR | TRANSCONDUCTANCE | 5 µA | YES | NO | 22 V | COMMERCIAL | R-PDSO-G16 | Not Qualified | e0 | 70 °C | 16 | PLASTIC/EPOXY | SOP | SOP16,.25 | RECTANGULAR | SMALL OUTLINE | YES | Tin/Lead (Sn/Pb) | GULL WING | 1.27 mm | DUAL | PHILIPS SEMICONDUCTORS | SOP, SOP16,.25 | unknown | EAR99 | 8542.33.00.01 | ||||||||||||||||||||||||||||||||
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NE5517AH-300
LSI Corporation
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Check for Price | No | Obsolete | 5 V | MOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | QUAD | SEEQ TECHNOLOGY INC | QCCJ, LDCC32,.5X.6 | unknown | EAR99 | 8542.32.00.51 | 300 ns | NO | YES | 1000000 Write/Erase Cycles | 16.384 kbit | EEPROM | 8 | 2.048 k | 2000 | 2KX8 | PARALLEL | NO | 2 ms | ||||||||||||||||||||||||||||
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NE5517A-150
LSI Corporation
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Check for Price | No | Obsolete | 5 V | MOS | INDUSTRIAL | R-PQCC-J32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Tin/Lead (Sn/Pb) | J BEND | 1.27 mm | QUAD | SEEQ TECHNOLOGY INC | QCCJ, LDCC32,.5X.6 | unknown | EAR99 | 8542.32.00.51 | 150 ns | NO | YES | 1000000 Write/Erase Cycles | 16.384 kbit | EEPROM | 8 | 2.048 k | 2000 | 2KX8 | PARALLEL | NO | 10 ms |