Parametric results for: NE32584C under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 15 LOW NOISE, HIGH RELIABILITY 4

22 hits Apply

Configuration (1)

SINGLE 19

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DS Breakdown Voltage-Min (2)

3 V 9 4 V 7

Min (V) - Max (V)

22 hits Apply

Drain Current-Max (ID) (2)

20 mA 11 90 mA 6

Min (A) - Max (A)

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HETERO-JUNCTION 16 HIGH ELECTRON MOBILITY 3 METAL SEMICONDUCTOR 3

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Highest Frequency Band (2)

KU BAND 12 X BAND 7

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O-CRDB-F4 14 X-CXMW-F4 5

22 hits Apply

e0 6

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Manufacturer (6)

California Eastern Laboratories (CEL) 3 NEC Compound Semiconductor Devices Ltd 5 NEC Corp 3 NEC Electronics America Inc 5 NEC Electronics Group 3 Renesas Electronics Corporation 3

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Number of Elements (1)

1 19

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Number of Terminals (1)

4 19

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DEPLETION MODE 19

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150.0 °C 6

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CERAMIC, METAL-SEALED COFIRED 19

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ROUND 14 UNSPECIFIED 5

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DISK BUTTON 14 MICROWAVE 5

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Obsolete 14 Transferred 8

22 hits Apply

Yes 2

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Polarity/Channel Type (1)

N-CHANNEL 22

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165 mW 3

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Power Gain-Min (Gp) (2)

11.0 dB 16 12.5 dB 3

Min (dB) - Max (dB)

22 hits Apply

Surface Mount (1)

YES 19

22 hits Apply