Parametric results for: NE21889 under RF Small Signal Field-Effect Transistors

All Filters Drain Current-Max (ID) FET Technology JESD-609 Code Manufacturer Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Drain Current-Max (ID) (1)

120 mA 1

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METAL SEMICONDUCTOR 1

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e0 1

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Manufacturer (1)

Renesas Electronics Corporation 1

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175.0 °C 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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300 mW 1

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