Parametric results for: NDB7061 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 8

16 hits Apply

500.0 mJ 16

16 hits Apply

DRAIN 16

16 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 16

16 hits Apply

DS Breakdown Voltage-Min (1)

60 V 16

16 hits Apply

Drain Current-Max (ID) (2)

60 A 8 64 A 8

Min (A) - Max (A)

16 hits Apply

Drain-source On Resistance-Max (2)

16 mΩ 8 18 mΩ 8

Min (Ω) - Max (Ω)

16 hits Apply

METAL-OXIDE SEMICONDUCTOR 16

16 hits Apply

TO-263AB 16

16 hits Apply

R-PSSO-G2 16

16 hits Apply

e0 4

16 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 8 Texas Instruments 8

16 hits Apply

Number of Elements (1)

1 16

16 hits Apply

Number of Terminals (1)

2 16

16 hits Apply

ENHANCEMENT MODE 16

16 hits Apply

175.0 °C 10

16 hits Apply

PLASTIC/EPOXY 16

16 hits Apply

RECTANGULAR 16

16 hits Apply

SMALL OUTLINE 16

16 hits Apply

Obsolete 14 Transferred 2

16 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 16

16 hits Apply

130 W 8

16 hits Apply

130 W 4

16 hits Apply

Surface Mount (1)

YES 16

16 hits Apply