Parametric results for: NDB510BE under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 2

6 hits Apply

65.0 mJ 2

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 2

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 6

6 hits Apply

Drain Current-Max (ID) (1)

13 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

150 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-263AB 6

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 Texas Instruments 4

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 2

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Obsolete 5 Transferred 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

60 W 4

6 hits Apply

75 W 2

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply