Parametric results for: ND2012 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

200 V 8

9 hits Apply

Drain Current-Max (ID) (1)

160 mA 9

9 hits Apply

Drain-source On Resistance-Max (1)

12 Ω 8

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

5 pF 8

9 hits Apply

TO-226AA 8

9 hits Apply

O-PBCY-W3 8

9 hits Apply

e0 3

9 hits Apply

Manufacturer (4)

Rochester Electronics LLC 2 Temic Semiconductors 4 Vishay Intertechnologies 1 Vishay Siliconix 2

9 hits Apply

NOT SPECIFIED 1

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

3 8

9 hits Apply

DEPLETION MODE 9

9 hits Apply

150.0 °C 2

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

ROUND 8

9 hits Apply

CYLINDRICAL 8

9 hits Apply

Active 3 Obsolete 5 Transferred 1

9 hits Apply

No 1 Yes 1

9 hits Apply

NOT SPECIFIED 1

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

800 mW 1

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply