Parametric results for: NAND01GW3B2CZA6E under Flash Memories

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Manufacturer Part Number: nand01gw3b2cza6e
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NAND01GW3B2CZA6E
STMicroelectronics
Check for Price Yes Transferred 1.0737 Gbit 8 128MX8 3 V 25 µs FLASH 1 128000000 134.2177 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 63 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.05 mm 11 mm 9 mm STMICROELECTRONICS BGA TFBGA, 63 compliant EAR99 8542.32.00.51
NAND01GW3B2CZA6E
Micron Technology Inc
Check for Price Yes Obsolete 1.0737 Gbit 8 128K 128MX8 3 V 25 µs FLASH YES NO 1 1K 128000000 134.2177 M ASYNCHRONOUS 2K words PARALLEL 3 V YES 50 µA 30 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO SLC NAND TYPE 25 ms R-PBGA-B63 Not Qualified e1 85 °C -40 °C 260 30 63 PLASTIC/EPOXY TFBGA BGA63,10X12,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.05 mm 11 mm 9 mm MICRON TECHNOLOGY INC BGA TFBGA, BGA63,10X12,32 63 unknown EAR99 8542.32.00.51 Micron
NAND01GW3B2CZA6E
Numonyx Memory Solutions
Check for Price Yes Transferred 1.0737 Gbit 8 128K 128MX8 3 V 25 µs FLASH YES NO 1 1K 128000000 134.2177 M ASYNCHRONOUS 2K words PARALLEL 3 V YES 50 µA 30 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO SLC NAND TYPE 25 ms R-PBGA-B63 Not Qualified 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 63 PLASTIC/EPOXY TFBGA BGA63,10X12,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.05 mm 11 mm 9 mm NUMONYX BGA TFBGA, BGA63,10X12,32 63 unknown EAR99 8542.32.00.51