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NAND01GR3B2BZA1F
Micron Technology Inc
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NAND01GR3B2BV1F
STMicroelectronics
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NAND01GR3B2BZA6F
Micron Technology Inc
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NAND01GR3B2BV6E
Numonyx Memory Solutions
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NAND01GR3B2BZA1F
STMicroelectronics
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NAND01GR3B2BZA1
Micron Technology Inc
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NAND01GR3B2BN6T
Micron Technology Inc
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NAND01GR3B2BN1E
Numonyx Memory Solutions
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NAND01GR3B2BN6T
Numonyx Memory Solutions
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NAND01GR3B2BZA6T
Micron Technology Inc
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Memory Density
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Memory Width |
Sector Size
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Organization |
Supply Voltage-Nom (Vsup)
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Access Time-Max
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Memory IC Type
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Command User Interface
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Data Polling
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Number of Functions |
Number of Sectors/Size
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Number of Words Code | Number of Words |
Operating Mode
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Page Size
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Parallel/Serial
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Programming Voltage
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Ready/Busy
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Standby Current-Max
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Supply Current-Max
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Supply Voltage-Max (Vsup)
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Supply Voltage-Min (Vsup)
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Technology |
Temperature Grade
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Toggle Bit
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Type
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JESD-30 Code
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Qualification Status
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JESD-609 Code
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Number of Terminals
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Package Body Material
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Package Code
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Package Equivalence Code
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Package Shape
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Package Style
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Surface Mount
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Terminal Finish
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Terminal Form
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Terminal Pitch
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Terminal Position
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Seated Height-Max
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Length
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Width
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Ihs Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Reach Compliance Code
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ECCN Code
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HTS Code
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Yes | Yes | Obsolete | 1.0737 Gbit | 8 | 128K | 128MX8 | 1.8 V | 30 ns | FLASH | YES | NO | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NO | R-PBGA-B63 | Not Qualified | e1 | 70 °C | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA63,10X12,32 | 63 | compliant | EAR99 | 8542.32.00.51 | |||||
Yes | Transferred | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 25 µs | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | COMMERCIAL | R-PDSO-G48 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | VSSOP | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 650 µm | 15.4 mm | 12 mm | STMICROELECTRONICS | SOIC | VSSOP, | 48 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||||
Yes | Yes | Obsolete | 1.0737 Gbit | 8 | 128K | 128MX8 | 1.8 V | 30 ns | FLASH | YES | NO | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e1 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA63,10X12,32 | 63 | compliant | EAR99 | 8542.32.00.51 | |||
Yes | Obsolete | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 25 µs | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NAND TYPE | R-PDSO-G48 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | VSSOP | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 650 µm | 15.4 mm | 12 mm | NUMONYX | SOIC | VSSOP, | 48 | compliant | EAR99 | 8542.32.00.51 | |||||||||||||
Yes | Transferred | 1.0737 Gbit | 8 | 128K | 128MX8 | 1.8 V | 25 µs | FLASH | YES | NO | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NO | R-PBGA-B63 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 11 mm | 9 mm | STMICROELECTRONICS | BGA | TFBGA, BGA63,10X12,32 | 63 | compliant | EAR99 | 8542.32.00.51 | ||||||
Obsolete | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 35 ns | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 15 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NAND TYPE | R-PBGA-B63 | 70 °C | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 63 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||||
Obsolete | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 35 ns | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NAND TYPE | R-PDSO-G48 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP | TSSOP, | 48 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||
Yes | Yes | Transferred | 1.0737 Gbit | 8 | 128K | 128MX8 | 1.8 V | 25 µs | FLASH | YES | NO | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NO | R-PDSO-G48 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | NUMONYX | TSOP | TSOP1, TSSOP48,.8,20 | 48 | unknown | EAR99 | 8542.32.00.51 | |||||
Transferred | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 35 ns | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PDSO-G48 | Not Qualified | e0 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | NUMONYX | TSOP | TSOP1, | 48 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||
Obsolete | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 35 ns | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NAND TYPE | R-PBGA-B63 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 63 | unknown | EAR99 | 8542.32.00.51 |
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NAND01GR3B2BZA1F
Micron Technology Inc
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Check for Price Buy | Yes | Yes | Obsolete | 1.0737 Gbit | 8 | 128K | 128MX8 | 1.8 V | 30 ns | FLASH | YES | NO | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NO | R-PBGA-B63 | Not Qualified | e1 | 70 °C | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA63,10X12,32 | 63 | compliant | EAR99 | 8542.32.00.51 | ||||||
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NAND01GR3B2BV1F
STMicroelectronics
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Check for Price Buy | Yes | Transferred | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 25 µs | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | COMMERCIAL | R-PDSO-G48 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | VSSOP | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 650 µm | 15.4 mm | 12 mm | STMICROELECTRONICS | SOIC | VSSOP, | 48 | compliant | EAR99 | 8542.32.00.51 | |||||||||||||||||
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NAND01GR3B2BZA6F
Micron Technology Inc
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Check for Price Buy | Yes | Yes | Obsolete | 1.0737 Gbit | 8 | 128K | 128MX8 | 1.8 V | 30 ns | FLASH | YES | NO | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | e1 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, BGA63,10X12,32 | 63 | compliant | EAR99 | 8542.32.00.51 | ||||
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NAND01GR3B2BV6E
Numonyx Memory Solutions
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Check for Price Buy | Yes | Obsolete | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 25 µs | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NAND TYPE | R-PDSO-G48 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | VSSOP | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 650 µm | 15.4 mm | 12 mm | NUMONYX | SOIC | VSSOP, | 48 | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||
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NAND01GR3B2BZA1F
STMicroelectronics
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Check for Price Buy | Yes | Transferred | 1.0737 Gbit | 8 | 128K | 128MX8 | 1.8 V | 25 µs | FLASH | YES | NO | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NO | R-PBGA-B63 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 11 mm | 9 mm | STMICROELECTRONICS | BGA | TFBGA, BGA63,10X12,32 | 63 | compliant | EAR99 | 8542.32.00.51 | |||||||
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NAND01GR3B2BZA1
Micron Technology Inc
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Check for Price Buy | Obsolete | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 35 ns | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 15 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NAND TYPE | R-PBGA-B63 | 70 °C | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 63 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||||||
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NAND01GR3B2BN6T
Micron Technology Inc
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Check for Price Buy | Obsolete | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 35 ns | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NAND TYPE | R-PDSO-G48 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | MICRON TECHNOLOGY INC | TSOP | TSSOP, | 48 | unknown | EAR99 | 8542.32.00.51 | ||||||||||||||||||
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NAND01GR3B2BN1E
Numonyx Memory Solutions
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Check for Price Buy | Yes | Yes | Transferred | 1.0737 Gbit | 8 | 128K | 128MX8 | 1.8 V | 25 µs | FLASH | YES | NO | 1 | 1K | 128000000 | 134.2177 M | ASYNCHRONOUS | 2K words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | COMMERCIAL | NO | R-PDSO-G48 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | NUMONYX | TSOP | TSOP1, TSSOP48,.8,20 | 48 | unknown | EAR99 | 8542.32.00.51 | ||||||
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NAND01GR3B2BN6T
Numonyx Memory Solutions
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Check for Price Buy | Transferred | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 35 ns | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PDSO-G48 | Not Qualified | e0 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | NUMONYX | TSOP | TSOP1, | 48 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||||
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NAND01GR3B2BZA6T
Micron Technology Inc
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Check for Price Buy | Obsolete | 1.0737 Gbit | 8 | 128MX8 | 1.8 V | 35 ns | FLASH | 1 | 128000000 | 134.2177 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NAND TYPE | R-PBGA-B63 | 85 °C | -40 °C | 63 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 12 mm | 9.5 mm | MICRON TECHNOLOGY INC | BGA | TFBGA, | 63 | unknown | EAR99 | 8542.32.00.51 |