Parametric results for: MX1011B430W under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

BASE 1

2 hits Apply

Collector Current-Max (IC) (1)

35 A 1

2 hits Apply

Collector-Emitter Voltage-Max (1)

20 V 1

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

Highest Frequency Band (1)

L BAND 1

2 hits Apply

R-CDFM-F2 1

2 hits Apply

Manufacturer (2)

NXP Semiconductors 1 Philips Semiconductors 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

200.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

1.2 kW 1

2 hits Apply

Power Gain-Min (Gp) (1)

6.7 dB 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply

Transition Frequency-Nom (fT) (1)

1 GHz 1

2 hits Apply