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MV1N8168
Microchip Technology Inc
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$37.0375 | No | Active | 70.1 V | 500 nA | 1 W | SILICON | 48.5 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 43 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LALF-W2 | IEC-61000-4-2,4-4,4-5 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | compliant | |||||||||
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MV1N8168US
Microchip Technology Inc
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$37.3175 | No | Active | 70.1 V | 1 W | SILICON | 48.5 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 43 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LELF-R2 | IEC-61000-4-2, 4-4; MIL-19500 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | MELF-2 | |||||||||
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MV1N8168US/TR
Microchip Technology Inc
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$37.4939 | No | Active | 70.1 V | 4 pF | 500 nA | 1 W | SILICON | 48.5 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 43 V | 1 | AVALANCHE | 150 W | 43 V | O-LELF-R2 | e0 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | compliant | MELF-2 | |||||||
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MV1N8168US
Microsemi Corporation
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Check for Price | No | Transferred | 70.1 V | 4 pF | 500 nA | 1 W | SILICON | 48.5 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 43 V | 1 | AVALANCHE | 150 W | 43 V | O-LELF-R2 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | MELF-2 | EAR99 | 8541.10.00.50 | |||||||
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MV1N8168E3
Microsemi Corporation
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Check for Price | Yes | Transferred | 70.1 V | 500 nA | 1 W | SILICON | 48.5 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 43 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LALF-W2 | IEC-61000-4-2,4-4,4-5 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | |||||||
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MV1N8168USE3
Microsemi Corporation
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Check for Price | Yes | Transferred | 70.1 V | 4 pF | 500 nA | 1 W | SILICON | 48.5 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 43 V | 1 | AVALANCHE | 150 W | 43 V | O-LELF-R2 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 | ||||||||
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MV1N8168US/TR
Microsemi Corporation
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Check for Price | No | Transferred | 70.1 V | 4 pF | 500 nA | 1 W | SILICON | 48.5 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 43 V | 1 | AVALANCHE | 150 W | 43 V | O-LELF-R2 | e0 | 175 °C | -55 °C | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROSEMI CORP | unknown | MELF-2 | EAR99 | 8541.10.00.50 | |||||
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MV1N8168
Microsemi Corporation
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Check for Price | No | Transferred | 70.1 V | 500 nA | 1 W | SILICON | 48.5 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | NO | 43 V | 1 | AVALANCHE | HIGH RELIABILITY | 150 W | O-LALF-W2 | IEC-61000-4-2,4-4,4-5 | 175 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | MICROSEMI CORP | compliant | EAR99 | 8541.10.00.50 |