Parametric results for: MTP2N18 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology JESD-609 Code Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (2)

180 V 1 200 V 1

Min (V) - Max (V)

5 hits Apply

Drain Current-Max (ID) (2)

2 A 3 3.25 A 2

Min (A) - Max (A)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

e0 3

5 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 1 National Semiconductor Corporation 1 New Jersey Semiconductor Products Inc 2 Texas Instruments 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

Active 1 Contact Manufacturer 1 Obsolete 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

50 W 3

5 hits Apply

Surface Mount (1)

NO 3

5 hits Apply