Parametric results for: MTD5N10 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

7 hits Apply

Configuration (2)

SINGLE 6 Single 1

7 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

7 hits Apply

Drain Current-Max (Abs) (ID) (1)

5 A 1

7 hits Apply

Drain Current-Max (ID) (1)

5 A 6

7 hits Apply

Drain-source On Resistance-Max (1)

500 mΩ 4

7 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

7 hits Apply

TO-251 2 TO-252 2

7 hits Apply

R-PSIP-T3 2 R-PSSO-G2 2

7 hits Apply

e0 4

7 hits Apply

Manufacturer (3)

Freescale Semiconductor 2 Motorola Mobility LLC 2 Motorola Semiconductor Products 3

7 hits Apply

Number of Elements (1)

1 6

7 hits Apply

Number of Terminals (2)

2 2 3 2

7 hits Apply

ENHANCEMENT MODE 7

7 hits Apply

175.0 °C 3

7 hits Apply

PLASTIC/EPOXY 4

7 hits Apply

RECTANGULAR 4

7 hits Apply

IN-LINE 2 SMALL OUTLINE 2

7 hits Apply

Obsolete 7

7 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

7 hits Apply

1.75 W 4

7 hits Apply

37.5 W 3

7 hits Apply

Surface Mount (2)

NO 3 YES 4

7 hits Apply