Parametric results for: MTD2955V1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

6 hits Apply

216.0 mJ 4

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

60 V 4

6 hits Apply

Drain Current-Max (ID) (1)

12 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

230 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSIP-T3 4

6 hits Apply

e0 4 e3 1

6 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Semiconductor Products 1 onsemi 4

6 hits Apply

1 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

IN-LINE 4

6 hits Apply

Obsolete 6

6 hits Apply

240 1 260 1

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 6

6 hits Apply

60 W 4

6 hits Apply

Surface Mount (2)

NO 4 YES 2

6 hits Apply