Parametric results for: MTB55N10EL under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (2)

Single 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

6 hits Apply

Drain Current-Max (Abs) (ID) (1)

55 A 2

6 hits Apply

Drain Current-Max (ID) (1)

55 A 4

6 hits Apply

Drain-source On Resistance-Max (1)

30 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSSO-G2 4

6 hits Apply

e0 4

6 hits Apply

Manufacturer (3)

Freescale Semiconductor 2 Motorola Mobility LLC 2 Motorola Semiconductor Products 2

6 hits Apply

Number of Elements (1)

1 4

6 hits Apply

Number of Terminals (1)

2 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 6

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

203 W 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply