Parametric results for: MTB52N06VL under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8

9 hits Apply

406.0 mJ 8

9 hits Apply

DRAIN 8

9 hits Apply

Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (1)

60 V 8

9 hits Apply

Drain Current-Max (Abs) (ID) (1)

52 A 1

9 hits Apply

Drain Current-Max (ID) (1)

52 A 8

9 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 8

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

340 pF 4

9 hits Apply

R-PSSO-G2 8

9 hits Apply

e0 5

9 hits Apply

Manufacturer (5)

Freescale Semiconductor 1 Motorola Mobility LLC 2 Motorola Semiconductor Products 2 onsemi 3 Rochester Electronics LLC 1

9 hits Apply

1 2 NOT SPECIFIED 1

9 hits Apply

Number of Elements (1)

1 8

9 hits Apply

Number of Terminals (1)

2 8

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

175.0 °C 7

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

SMALL OUTLINE 8

9 hits Apply

Active 1 Obsolete 4 Transferred 4

9 hits Apply

No 1

9 hits Apply

235 2 NOT SPECIFIED 2

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

165 W 4

9 hits Apply

165 W 5

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply