Parametric results for: MTB52N06V under Power Field-Effect Transistors

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Manufacturer Part Number: mtb52n06v
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MTB52N06VT4
Motorola Mobility LLC
Check for Price Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 22 mΩ AVALANCHE RATED 406 mJ 300 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 182 A SWITCHING SILICON 280 ns 290 ns R-PSSO-G2 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE MOTOROLA INC SMALL OUTLINE, R-PSSO-G2 3 unknown EAR99 8541.29.00.95
MTB52N06VT4
Motorola Semiconductor Products
Check for Price Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 22 mΩ AVALANCHE RATED 406 mJ 300 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 182 A SWITCHING SILICON 280 ns 290 ns R-PSSO-G2 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE MOTOROLA INC SMALL OUTLINE, R-PSSO-G2 unknown EAR99 8541.29.00.95
MTB52N06VL
onsemi
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 25 mΩ AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 406 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 182 A SWITCHING SILICON R-PSSO-G2 e0 Not Qualified 1 175 °C 235 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING SINGLE ON SEMICONDUCTOR D2PAK-3 3 not_compliant EAR99
MTB52N06VL
Freescale Semiconductor
Check for Price No Obsolete N-CHANNEL YES Single 52 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 175 °C MOTOROLA SEMICONDUCTOR PRODUCTS , unknown
MTB52N06VLT4
onsemi
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 25 mΩ AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 406 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 182 A SWITCHING SILICON R-PSSO-G2 e0 Not Qualified 1 175 °C 235 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING SINGLE ON SEMICONDUCTOR D2PAK-3 3 not_compliant EAR99
MTB52N06VLT4
Motorola Semiconductor Products
Check for Price Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 25 mΩ AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 406 mJ 340 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 182 A SWITCHING SILICON 520 ns 780 ns R-PSSO-G2 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE MOTOROLA INC SMALL OUTLINE, R-PSSO-G2 unknown EAR99 8541.29.00.95
MTB52N06VT4
onsemi
Check for Price No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 22 mΩ AVALANCHE RATED 406 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 188 W 182 A SWITCHING SILICON R-PSSO-G2 e0 Not Qualified 1 175 °C 235 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN LEAD GULL WING SINGLE ON SEMICONDUCTOR D2PAK-3 3 not_compliant EAR99
MTB52N06VL
Motorola Semiconductor Products
Check for Price No Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 25 mΩ AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 406 mJ 340 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 165 W 182 A SWITCHING SILICON 520 ns 780 ns R-PSSO-G2 e0 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Lead (Sn/Pb) GULL WING SINGLE MOTOROLA INC SMALL OUTLINE, R-PSSO-G2 unknown EAR99 8541.29.00.95
MTB52N06VL
Motorola Mobility LLC
Check for Price Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 25 mΩ AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 406 mJ 340 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 165 W 182 A SWITCHING SILICON 520 ns 780 ns R-PSSO-G2 e0 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Lead (Sn/Pb) GULL WING SINGLE MOTOROLA INC SMALL OUTLINE, R-PSSO-G2 unknown EAR99 8541.29.00.95
MTB52N06V
Motorola Semiconductor Products
Check for Price No Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 52 A 22 mΩ AVALANCHE RATED 406 mJ 300 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 165 W 165 W 182 A SWITCHING SILICON 280 ns 290 ns R-PSSO-G2 e0 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin/Lead (Sn/Pb) GULL WING SINGLE MOTOROLA INC SMALL OUTLINE, R-PSSO-G2 unknown EAR99 8541.29.00.95