Parametric results for: MTB4N80E1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

320.0 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

800 V 3

4 hits Apply

Drain Current-Max (Abs) (ID) (1)

4 A 1

4 hits Apply

Drain Current-Max (ID) (1)

4 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

3 Ω 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSIP-T3 3

4 hits Apply

e0 3

4 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

IN-LINE 3

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

125 W 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply