Parametric results for: MT8HTF12864HY-40EA3 under DRAMs

All Filters Access Time-Max Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

600 ps 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

200 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

R-PDMA-N200 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Micron Technology Inc 1

1 hit Apply

Memory Density (1)

8.5899 Gbit 1

1 hit Apply

DDR DRAM MODULE 1

1 hit Apply

Memory Width (1)

64 1

1 hit Apply

1 1

1 hit Apply

200 1

1 hit Apply

134.2177 M 1

1 hit Apply

1.28E8 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

128MX64 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

DIMM 1

1 hit Apply

DIMM200,24 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

MICROELECTRONIC ASSEMBLY 1

1 hit Apply

Refresh Cycles (1)

8192 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 1

1 hit Apply