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Parametric » Memory » SRAMs

Parametric results for: MT5C2561C-45/XT under SRAMs

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Select Parts		Part Number

		MT5C2561C-45/XT Micross Components
		MT5C2561C-45XT Micross Components
		MT5C2561C-45XT Micron Technology Inc

				Most Relevant					Technical															Compliance			Operating Conditions				Physical											Dimensions		Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	I/O Type	Number of Functions	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Standby Current-Max	Standby Voltage-Min	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	JESD-30 Code	Qualification Status	JESD-609 Code	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

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Active

262.144 kbit

1

256KX1

5 V

45 ns

STANDARD SRAM

1

256000

262.144 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T24

125 °C

-55 °C

24

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

NO

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

7.62 mm

MICROSS COMPONENTS

DIP

0.300 INCH, CERAMIC, DIP-24

24

compliant

3A001.A.2.C

8542.32.00.41

Check for Price

No

No

Obsolete

262.144 kbit

1

256KX1

5 V

45 ns

STANDARD SRAM

1

256000

262.144 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T24

Not Qualified

e0

125 °C

-55 °C

NOT SPECIFIED

NOT SPECIFIED

24

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

7.62 mm

AUSTIN SEMICONDUCTOR INC

DIP

DIP,

24

unknown

Check for Price

No

Obsolete

262.144 kbit

1

256KX1

5 V

45 ns

STANDARD SRAM

SEPARATE

256000

262.144 k

ASYNCHRONOUS

3-STATE

PARALLEL

8 mA

4.5 V

100 µA

CMOS

MILITARY

R-XDIP-T24

Not Qualified

e0

125 °C

-55 °C

24

CERAMIC

DIP

DIP24,.3

RECTANGULAR

IN-LINE

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

MICRON TECHNOLOGY INC

not_compliant

3A001.A.2.C

8542.32.00.41

Compare

MT5C2561C-45/XT

Micross Components

Check for Price

Active

262.144 kbit

1

256KX1

5 V

45 ns

STANDARD SRAM

1

256000

262.144 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T24

125 °C

-55 °C

24

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

NO

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

7.62 mm

MICROSS COMPONENTS

DIP

0.300 INCH, CERAMIC, DIP-24

24

compliant

3A001.A.2.C

8542.32.00.41

Micross Components

Check for Price

No

No

Obsolete

262.144 kbit

1

256KX1

5 V

45 ns

STANDARD SRAM

1

256000

262.144 k

ASYNCHRONOUS

PARALLEL

5.5 V

4.5 V

CMOS

MILITARY

R-CDIP-T24

Not Qualified

e0

125 °C

-55 °C

NOT SPECIFIED

NOT SPECIFIED

24

CERAMIC, METAL-SEALED COFIRED

DIP

RECTANGULAR

IN-LINE

NO

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

5.08 mm

7.62 mm

AUSTIN SEMICONDUCTOR INC

DIP

DIP,

24

unknown

Micron Technology Inc

Check for Price

No

Obsolete

262.144 kbit

1

256KX1

5 V

45 ns

STANDARD SRAM

SEPARATE

256000

262.144 k

ASYNCHRONOUS

3-STATE

PARALLEL

8 mA

4.5 V

100 µA

CMOS

MILITARY

R-XDIP-T24

Not Qualified

e0

125 °C

-55 °C

24

CERAMIC

DIP

DIP24,.3

RECTANGULAR

IN-LINE

NO

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

MICRON TECHNOLOGY INC

not_compliant

3A001.A.2.C

8542.32.00.41