Parametric results for: MT58L256L18P1 under SRAMs

All Filters Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (7)

2.3 ns 10 2.6 ns 10 2.8 ns 8 3.1 ns 3 3.5 ns 11 4 ns 11 5 ns 11

Min (ns) - Max (ns)

64 hits Apply

PIPELINED ARCHITECTURE 24

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Clock Frequency-Max (fCLK) (6)

100 MHz 4 133 MHz 4 166 MHz 4 200 MHz 4 225 MHz 4 250 MHz 4

Min (MHz) - Max (MHz)

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COMMON 24

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R-PBGA-B119 18 R-PBGA-B165 12 R-PQFP-G100 34

64 hits Apply

e0 39 e1 12

64 hits Apply

15 mm 12 20 mm 28 22 mm 12

Min (mm) - Max (mm)

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Manufacturer (3)

Cypress Semiconductor 18 Micron Technology Inc 42 Rochester Electronics LLC 4

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Memory Density (1)

4.7186 Mbit 64

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CACHE SRAM 34 STANDARD SRAM 30

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Memory Width (1)

18 64

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3 14

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1.0 52

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100 34 119 18 165 12

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262.144 k 64

64 hits Apply

256000.0 64

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SYNCHRONOUS 64

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70.0 °C 46 85.0 °C 18

Min (°C) - Max (°C)

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-40.0 °C 18 0.0 °C 46

Min (°C) - Max (°C)

64 hits Apply

Organization (1)

256KX18 64

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3-STATE 24

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PLASTIC/EPOXY 64

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BGA 18 LQFP 28 QFP 6 TBGA 12

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BGA119,7X17,50 6 BGA165,11X15,40 6 QFP100,.63X.87 12

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RECTANGULAR 64

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FLATPACK 6 FLATPACK, LOW PROFILE 28 GRID ARRAY 18 GRID ARRAY, THIN PROFILE 12

64 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 64

64 hits Apply