Parametric results for: MT58L1MY18FF-10 under SRAMs

All Filters Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

10 ns 2

3 hits Apply

FLOW-THROUGH ARCHITECTURE 2

3 hits Apply

Clock Frequency-Max (fCLK) (1)

66 MHz 1

3 hits Apply

COMMON 1

3 hits Apply

R-PBGA-B165 2

3 hits Apply

e0 2

3 hits Apply

15 mm 2

3 hits Apply

Manufacturer (2)

Cypress Semiconductor 1 Micron Technology Inc 2

3 hits Apply

Memory Density (1)

18.8744 Mbit 2

3 hits Apply

CACHE SRAM 2

3 hits Apply

Memory Width (1)

18 2

3 hits Apply

3 1

3 hits Apply

1.0 2

3 hits Apply

165 2

3 hits Apply

1.0486 M 2

3 hits Apply

1000000.0 2

3 hits Apply

SYNCHRONOUS 2

3 hits Apply

70.0 °C 2

3 hits Apply

0.0 °C 2

3 hits Apply

Organization (1)

1MX18 2

3 hits Apply

3-STATE 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

TBGA 2

3 hits Apply

BGA165,11X15,40 1

3 hits Apply

RECTANGULAR 2

3 hits Apply

GRID ARRAY, THIN PROFILE 2

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

3 hits Apply