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MT46V32M8BG-75EIT:F
Micron Technology Inc
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Check for Price | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 2.5 V | 750 ps | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 160 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TBGA, | 60 | unknown | EAR99 | 8542.32.00.28 | ||||||||||||||
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MT46V32M8BG-75EIT
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 2.5 V | 750 ps | 133 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 4 mA | 350 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 60 | PLASTIC/EPOXY | TBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TBGA, BGA60,9X12,40/32 | 60 | compliant | EAR99 | 8542.32.00.24 | ||
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MT46V32M8BG-75EIT:C
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 2.5 V | 750 ps | 133 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 4 mA | 350 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TBGA, BGA60,9X12,40/32 | 60 | compliant | EAR99 | 8542.32.00.24 | |||
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MT46V32M8BG-75EITH
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 268.4355 Mbit | 8 | 32MX8 | 2.5 V | 750 ps | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 160 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TBGA, | 60 | unknown | EAR99 | 8542.32.00.24 | ||||||||||
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MT46V32M8BG-75EIT:G
Micron Technology Inc
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Check for Price | Yes | Yes | Obsolete | 536.8709 Mbit | 8 | 64MX8 | 2.5 V | 750 ps | 133 MHz | 8192 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 4 mA | 350 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | e1 | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TBGA | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | TBGA, BGA60,9X12,40/32 | 60 | compliant | EAR99 | 8542.32.00.28 |