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MT45W4MW16BFB-706LWT
Micron Technology Inc
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 1.8 V | 70 ns | PSEUDO STATIC RAM | SYNCHRONOUS BURST MODE POSSIBLE | COMMON | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 µA | 30 µA | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B54 | Not Qualified | e0 | 85 °C | -30 °C | 54 | PLASTIC/EPOXY | VFBGA | BGA54,6X9,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1 mm | 8 mm | 6 mm | MICRON TECHNOLOGY INC | BGA | 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, VFBGA-54 | 54 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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MT45W4MW16BFB706LWT
Micron Technology Inc
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 1.8 V | 70 ns | PSEUDO STATIC RAM | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | PARALLEL | 1.95 V | 1.7 V | CMOS | OTHER | R-PBGA-B54 | Not Qualified | e0 | 85 °C | -30 °C | 235 | 30 | 54 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD SILVER | BALL | 750 µm | BOTTOM | 1 mm | 8 mm | 6 mm | MICRON TECHNOLOGY INC | BGA | VFBGA, | 54 | unknown |