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MT42L256M64D4GVLF-25AT:A
Micron Technology Inc
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Check for Price | Obsolete | DDR DRAM | MICRON TECHNOLOGY INC | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||
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MT42L256M64D4EV-3AAT:A
Micron Technology Inc
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Check for Price | Obsolete | 17.1799 Gbit | 64 | 256MX64 | 1.2 V | 5.5 ns | 333 MHz | 8192 | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY | COMMON | 4,8,16 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8,16 | 1.3 V | 1.14 V | CMOS | S-PBGA-B253 | 105 °C | -40 °C | 253 | PLASTIC/EPOXY | TFBGA | BGA253,17X17,20 | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 500 µm | BOTTOM | 1.2 mm | 11 mm | 11 mm | MICRON TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.36 | ||||||
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MT42L256M64D4GULL-18WT:A
Micron Technology Inc
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Check for Price | Active | DDR DRAM | MICRON TECHNOLOGY INC | unknown | , | |||||||||||||||||||||||||||||||||||||||||||||
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MT42L256M64D4GULL-18AT:A
Micron Technology Inc
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Check for Price | Active | DDR DRAM | MICRON TECHNOLOGY INC | unknown | , | |||||||||||||||||||||||||||||||||||||||||||||
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MT42L256M64D4LL-25AAT:A
Micron Technology Inc
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Check for Price | Obsolete | 17.1799 Gbit | 64 | 256MX64 | 1.2 V | 5.5 ns | 400 MHz | 8192 | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY | COMMON | 4,8,16 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 4,8,16 | 1.3 V | 1.14 V | CMOS | S-PBGA-B216 | 105 °C | -40 °C | 216 | PLASTIC/EPOXY | VFBGA | BGA216,29X29,16 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 400 µm | BOTTOM | 800 µm | 12 mm | 12 mm | MICRON TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.36 | ||||||
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MT42L256M64D4LM-25WT:A
Micron Technology Inc
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Check for Price | Yes | Obsolete | 17.1799 Gbit | 64 | 256MX64 | 1.8 V | 5.5 ns | 8192 | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | S-PBGA-B216 | e1 | 216 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 400 µm | BOTTOM | 1 mm | 12 mm | 12 mm | MICRON TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.36 | VFBGA, | ||||||||||
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MT42L256M64D4GULK-3WT:A
Micron Technology Inc
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Check for Price | Active | DDR DRAM | MICRON TECHNOLOGY INC | unknown | , | |||||||||||||||||||||||||||||||||||||||||||||
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MT42L256M64D4GULK-3AT:A
Micron Technology Inc
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Check for Price | Active | DDR DRAM | MICRON TECHNOLOGY INC | unknown | , | |||||||||||||||||||||||||||||||||||||||||||||
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MT42L256M64D4LM-18WT:A
Micron Technology Inc
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Check for Price | Yes | Obsolete | 17.1799 Gbit | 64 | 256MX64 | 1.8 V | 5.5 ns | 8192 | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | S-PBGA-B216 | 216 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 400 µm | BOTTOM | 1 mm | 12 mm | 12 mm | MICRON TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.36 | VFBGA, | ||||||||||||
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MT42L256M64D4GVMP-3WT:A
Micron Technology Inc
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Check for Price | Obsolete | DDR DRAM | MICRON TECHNOLOGY INC | unknown | EAR99 |