Parametric results for: MT16LSDT3264AG-10E under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

DUAL BANK PAGE BURST 3

4 hits Apply

Access Time-Max (1)

6 ns 4

4 hits Apply

AUTO/SELF REFRESH 3

4 hits Apply

Clock Frequency-Max (fCLK) (1)

125 MHz 1

4 hits Apply

COMMON 1

4 hits Apply

R-PDMA-N168 1 R-XDMA-N168 3

4 hits Apply

e0 3

4 hits Apply

Manufacturer (1)

Micron Technology Inc 4

4 hits Apply

Memory Density (1)

2.1475 Gbit 4

4 hits Apply

SYNCHRONOUS DRAM MODULE 4

4 hits Apply

Memory Width (1)

64 4

4 hits Apply

1.0 3

4 hits Apply

1 3

4 hits Apply

168 4

4 hits Apply

33.5544 M 4

4 hits Apply

3.2E7 4

4 hits Apply

SYNCHRONOUS 3

4 hits Apply

65.0 °C 1 70.0 °C 3

Min (°C) - Max (°C)

4 hits Apply

0.0 °C 4

4 hits Apply

Organization (1)

32MX64 4

4 hits Apply

3-STATE 1

4 hits Apply

PLASTIC/EPOXY 1 UNSPECIFIED 3

4 hits Apply

DIMM 2

4 hits Apply

DIMM168 1

4 hits Apply

RECTANGULAR 4

4 hits Apply

MICROELECTRONIC ASSEMBLY 4

4 hits Apply

Refresh Cycles (1)

4096 1

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 4

4 hits Apply