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MSMBJ58A
Microsemi Corporation
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$1.0254 | No | No | Transferred | 1.38 W | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-J2 | e0 | DO-214AA | 1 | 150 °C | -65 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | J BEND | DUAL | MICROSEMI CORP | DO-214AA | PLASTIC, SMBJ, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.50 | ||||||||||
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MSMBJ58AE3
Microsemi Corporation
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$1.0254 | Yes | Yes | Transferred | 1.38 W | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROSEMI CORP | DO-214AA | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.50 | ||||||||
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MSMBJ58A
Microchip Technology Inc
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$1.1300 | No | Active | 1.38 W | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-J2 | e0 | DO-214AA | 1 | 150 °C | -65 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | J BEND | DUAL | MICROCHIP TECHNOLOGY INC | PLASTIC, SMBJ, 2 PIN | compliant | Microchip | ||||||||||||||
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MSMBJ58AE3/TR
Microsemi Corporation
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$1.1447 | Yes | Transferred | 93.6 V | 1.38 W | 67.8 V | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROSEMI CORP | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | not_compliant | EAR99 | 8541.10.00.50 | |||||||||
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MSMBJ58A/TR
Microsemi Corporation
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$1.1447 | No | Transferred | 93.6 V | 1.38 W | 67.8 V | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-C2 | e0 | DO-214AA | 1 | 150 °C | -65 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | C BEND | DUAL | MICROSEMI CORP | PLASTIC, SMBJ, 2 PIN | not_compliant | EAR99 | 8541.10.00.50 | Microsemi Corporation | ||||||||||
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MSMBJ58AE3/TR
Microchip Technology Inc
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$1.3250 | Yes | Active | 93.6 V | 1 µA | 1.38 W | 67.8 V | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | 58 V | Not Qualified | R-PDSO-C2 | e3 | IEC-61000-4-2,4-4,4-5; MIL-19500; MIL-STD-750 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROCHIP TECHNOLOGY INC | SMBJ, 2 PIN | not_compliant | ||||||||
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MSMBJ58A/TR
Microchip Technology Inc
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$1.3250 | No | Active | 93.6 V | 1.38 W | 67.8 V | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-C2 | e0 | DO-214AA | 1 | 150 °C | -65 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | C BEND | DUAL | MICROCHIP TECHNOLOGY INC | PLASTIC, SMBJ, 2 PIN | compliant | Microchip | ||||||||||||
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MSMBJ58AE3
Microchip Technology Inc
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Check for Price | Yes | Active | 1.38 W | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-J2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | J BEND | DUAL | MICROCHIP TECHNOLOGY INC | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | not_compliant | |||||||||||||
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MSMBJ58AE3TR
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | 93.6 V | 1.38 W | 67.8 V | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-C2 | e3 | DO-214AA | 1 | 150 °C | -65 °C | 250 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | C BEND | DUAL | MICROSEMI CORP | DO-214AA | R-PDSO-C2 | 2 | unknown | EAR99 | 8541.10.00.50 | ||||||
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MSMBJ58ATR
Microsemi Corporation
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Check for Price | No | No | Transferred | 93.6 V | 1.38 W | 67.8 V | SILICON | 64.4 V | TRANS VOLTAGE SUPPRESSOR DIODE | UNIDIRECTIONAL | SINGLE | YES | 58 V | 1 | AVALANCHE | HIGH RELIABILITY | 71.2 V | 600 W | Not Qualified | R-PDSO-C2 | e0 | DO-214AA | 1 | 150 °C | -65 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | C BEND | DUAL | MICROSEMI CORP | DO-214AA | R-PDSO-C2 | 2 | unknown | EAR99 | 8541.10.00.50 |