Parametric results for: MS1202 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS 2 WITH EMITTER BALLASTING RESISTORS, HIGH RELIABILITY 1

3 hits Apply

EMITTER 2

3 hits Apply

Collector Current-Max (IC) (1)

1 A 3

3 hits Apply

15 pF 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

35 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DC Current Gain-Min (hFE) (1)

5.0 2

3 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 3

3 hits Apply

O-PRPM-F4 3

3 hits Apply

Manufacturer (3)

Advanced Power Technology 1 Microchip Technology Inc 1 Microsemi Corporation 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

200.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

ROUND 3

3 hits Apply

POST/STUD MOUNT 3

3 hits Apply

Active 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

15 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply