Parametric results for: MRFE6VP6300 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 8

9 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 8

9 hits Apply

DS Breakdown Voltage-Min (1)

130 V 8

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 8

9 hits Apply

R-CDFM-F4 4 R-CDFP-F4 4

9 hits Apply

Manufacturer (3)

Freescale Semiconductor 4 NXP Semiconductors 4 Rochester Electronics LLC 1

9 hits Apply

NOT APPLICABLE 1

9 hits Apply

Number of Elements (1)

2 8

9 hits Apply

Number of Terminals (1)

4 8

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

225.0 °C 7

9 hits Apply

CERAMIC, METAL-SEALED COFIRED 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

FLANGE MOUNT 4 FLATPACK 4

9 hits Apply

Active 1 Not Recommended 2 Obsolete 2 Transferred 4

9 hits Apply

Yes 5

9 hits Apply

260 9

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

Surface Mount (1)

YES 8

9 hits Apply