Parametric results for: MRF8P18265HR6 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

65 V 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

L BAND 2

2 hits Apply

R-CQFM-F8 2

2 hits Apply

Manufacturer (2)

Freescale Semiconductor 1 NXP Semiconductors 1

2 hits Apply

Number of Elements (1)

2 2

2 hits Apply

Number of Terminals (1)

8 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

225.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply