Parametric results for: MRF891S under RF Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Collector Current-Max (IC) (1)

600 mA 3

3 hits Apply

8 pF 2

3 hits Apply

Collector-Emitter Voltage-Max (1)

30 V 2

3 hits Apply

Configuration (2)

SINGLE 2 Single 1

3 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 3

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

3 hits Apply

R-CDMW-F6 2

3 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

6 2

3 hits Apply

150.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

MICROWAVE 2

3 hits Apply

Obsolete 3

3 hits Apply

Polarity/Channel Type (1)

NPN 3

3 hits Apply

18 W 2

3 hits Apply

18 W 3

3 hits Apply

Power Gain-Min (Gp) (1)

9.0 dB 2

3 hits Apply

Surface Mount (2)

NO 1 YES 2

3 hits Apply