Parametric results for: MRF858S under RF Power Bipolar Transistors

All Filters Additional Feature Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

WITH EMITTER BALLASTING RESISTOR 1 WITH EMITTER BALLASTING RESISTORS 2

4 hits Apply

8 pF 3

4 hits Apply

Collector-Emitter Voltage-Max (1)

30 V 3

4 hits Apply

Configuration (1)

SINGLE 3

4 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 2

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

4 hits Apply

R-CDFP-F6 3

4 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 NXP Semiconductors 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

6 3

4 hits Apply

200.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLATPACK 3

4 hits Apply

Obsolete 1 Transferred 3

4 hits Apply

Polarity/Channel Type (1)

NPN 3

4 hits Apply

20 W 2

4 hits Apply

20 W 2

4 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply