Parametric results for: MRF846 under RF Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Collector Current-Max (IC) (2)

12 A 1 14 A 4

Min (A) - Max (A)

5 hits Apply

100 pF 1 120 pF 2

Min (pF) - Max (pF)

5 hits Apply

Collector-Emitter Voltage-Max (2)

16 V 3 16.5 V 1

Min (V) - Max (V)

5 hits Apply

Configuration (3)

COMMON BASE, 2 ELEMENTS 1 SINGLE 3 Single 1

5 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 5

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 4

5 hits Apply

R-CDFM-F6 3

5 hits Apply

Manufacturer (5)

Advanced Semiconductor Inc 1 Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

6 3

5 hits Apply

150.0 °C 3 200.0 °C 1

Min (°C) - Max (°C)

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

FLANGE MOUNT 3

5 hits Apply

Active 2 Obsolete 3

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

150 W 4

5 hits Apply

Power Gain-Min (Gp) (1)

4.3 dB 2

5 hits Apply

Surface Mount (2)

NO 1 YES 3

5 hits Apply