Parametric results for: MRF19045R3 under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH EFFICIENCY 3

3 hits Apply

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

65 V 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

Highest Frequency Band (1)

L BAND 3

3 hits Apply

R-CDFM-F2 3

3 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

200.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

105 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply