Parametric results for: MRF172 under RF Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 2

5 hits Apply

Configuration (2)

SINGLE 3 Single 1

5 hits Apply

DS Breakdown Voltage-Min (1)

65 V 4

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

9 A 1

5 hits Apply

Drain Current-Max (ID) (2)

4.5 A 1 9 A 3

Min (A) - Max (A)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 3

5 hits Apply

O-CRFM-F4 3

5 hits Apply

Manufacturer (5)

Advanced Semiconductor Inc 1 Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1

5 hits Apply

Number of Elements (1)

1 3

5 hits Apply

Number of Terminals (1)

4 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

200.0 °C 4

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

5 hits Apply

ROUND 3

5 hits Apply

FLANGE MOUNT 3

5 hits Apply

Active 1 Contact Manufacturer 1 Obsolete 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

220 W 4

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply