Parametric results for: MR16R1622AF0-CG6 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

BLOCK ORIENTED PROTOCOL 1

1 hit Apply

Access Time-Max (1)

53.3 ns 1

1 hit Apply

SELF CONTAINED REFRESH 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

600 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

R-XDMA-N184 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

536.8709 Mbit 1

1 hit Apply

RAMBUS DRAM MODULE 1

1 hit Apply

Memory Width (1)

16 1

1 hit Apply

1 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

184 1

1 hit Apply

33.5544 M 1

1 hit Apply

3.2E7 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

Organization (1)

32MX16 1

1 hit Apply

3-STATE 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

DIMM 1

1 hit Apply

DIMM184,40 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

MICROELECTRONIC ASSEMBLY 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 1

1 hit Apply