Parametric results for: MMSF6N01HD under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS 6

6 hits Apply

DS Breakdown Voltage-Min (1)

12 V 6

6 hits Apply

Drain Current-Max (ID) (1)

6 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

45 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-G8 6

6 hits Apply

Manufacturer (2)

Motorola Mobility LLC 3 Motorola Semiconductor Products 3

6 hits Apply

Number of Elements (1)

2 6

6 hits Apply

Number of Terminals (1)

8 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply