Parametric results for: MMRF1317HR5 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 2

2 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS 2

2 hits Apply

DS Breakdown Voltage-Min (1)

105 V 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

2.43 pF 2

2 hits Apply

Highest Frequency Band (1)

L BAND 2

2 hits Apply

R-CDFM-F4 2

2 hits Apply

Manufacturer (1)

NXP Semiconductors 2

2 hits Apply

Number of Elements (1)

2 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

225.0 °C 2

2 hits Apply

-55.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Not Recommended 2

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Power Gain-Min (Gp) (1)

17.4 dB 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply